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HiPerFET TM
Power MOSFETs
Q-Class
IXFE 73N30Q
V DSS
I D25
R DS(on)
= 300 V
= 66 A
= 46 m ?
N-Channel Enhancement Mode
t rr ≤ 250 ns
Avalanche Rated, Low Q g , High dv/dt
Preliminary data sheet
ISOPLUS 227 TM (IXFE)
Symbol
Test Conditions
Maximum Ratings
S
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
300
300
± 20
± 30
V
V
V
V
G
I D25
I DM
T C = 25 ° C
T C = 25 ° C, Note1
66
292
A
A
D
S
I AR
E AR
T C = 25 ° C
T C = 25 ° C
73
60
A
mJ
G = Gate
S = Source
D = Drain
E AS
2.5
J
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt
P D
T J
T JM
T stg
V ISOL
M d
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
50/60 Hz, RMS t = 1 min
I ISOL ≤ 1 mA t=1s
Mounting torque
Terminal connection torque
5
400
-55 to +150
150
-55 to +150
2500
3000
1.5/13
1.5/13
V/ns
W
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
Features
? Conforms to SOT-227B outline
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
? Fast intrinsic Rectifier
Weight
Symbol
V DSS
Test Conditions
V GS = 0 V, I D = 1 mA
19 g
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
300 V
Applications
? DC-DC converters
? Battery chargers
? Switched-mode and resonant-mode
power supplies
? DC choppers
? Temperature and lighting controls
V GS(th)
V DS = V GS , I D = 4 mA
2.0
4.0
V
I GSS
I DSS
R DS(on)
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = I T
Note1
T J = 25 ° C
T J = 125 ° C
± 100
100
2
46
nA
μ A
mA
m ?
Advantages
? Low cost
? Easy to mount
? Space savings
? High power density
? 2002 IXYS All rights reserved
98899 (1/02)
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